Residual Stress Measurement in Silicon Substrates after Thermal Oxidation.

Residual Stress in Cu Sputtered Films on Glass Substrates at Different Substrate Temperatures

Copper films of 300 nm thickness deposited by planar magnetron sputtering on glass substrates, for substrate temperatures between 300 and 500 K, and deposition rate of 10 ?s?1. Microstructure of these films was obtained by X-ray diffraction, while the texture mode of diffractometer was used for stress measurement by the sin2? technique. The components of the stress tensor are obtained using mea...

Thermal Oxidation Mechanism of Silicon Carbide

Measurement of residual stress in multicrystalline silicon ribbons by a self-calibrating infrared photoelastic method

This article reports on a method for the measurement of residual stress in multicrystalline silicon ribbons, based on the infrared photoelastic technique. This self-calibrating method allows the in situ determination of the photoelastic coefficients and can thus be used for any crystal orientation. The method was validated by the experimental determination of the photoelastic coefficient of mon...

Measurement and Analysis of Wire Sawing Induced Residual Stress in Photovoltaic Silicon Wafers

Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation

The aim of this paper is to present viscoelastic models to accurately simulate mechanical stresses which result from volume expansion during thermal oxidation or temperature ramps in silicon technology. Comparisons are made with wafer curvature measurements and it is shown that mechanical stresses can explain the "anomalously" fast initial regime during dry oxidation, without involving any addi...